大学院
学内のオンライン授業の情報漏洩防止のため，URLやアカウント、教室の記載は削除しております。
最終更新日：2026年10月16日
授業計画や教室は変更となる可能性があるため、必ずUTASで最新の情報を確認して下さい。
UTASにアクセスできない方は、担当教員または部局教務へお問い合わせ下さい。
最終更新日：2026年10月16日
授業計画や教室は変更となる可能性があるため、必ずUTASで最新の情報を確認して下さい。
UTASにアクセスできない方は、担当教員または部局教務へお問い合わせ下さい。
材料システム工学Ⅲ
The main objective of the course is to provide an overview of the electronic properties of materials with emphasis on fundamental physical models that describe the crystal structure, chemical bonding, band structure of solids, charge carrier transport in semiconductors and metal-semiconductor junctions. This will be followed by an introduction to the operating principles of important solid-state electronic devices and their applications. After attending the course, the students should be able to understand the origin of electrical properties of materials and their relation to the operating principles of key devices used in modern-day electronics.
Course Topics
Crystal Structure
X-ray Diffraction
Chemical Bonding
The Atom and Energy Band Formation
Electron and Holes in Solids
Charge Transport in metal-semiconductor and semiconductor-
semiconductor junctions
Dielectrics
Semiconductor Devices and Applications
Emerging Electronic Materials
The primary objective of this course is to provide a rigorous foundation for understanding the electronic properties of materials and their connection to modern solid-state devices. The course begins with the fundamental physical concepts governing crystal structure, chemical bonding, and the electronic band structure of solids, and then develops these concepts toward the description of charge carriers, carrier statistics, and transport phenomena in semiconductors. Particular emphasis is placed on establishing the relationships among atomic-scale structure, electronic structure, and macroscopic electrical properties.
The course subsequently addresses semiconductor interfaces and junctions, including metal–semiconductor contacts, and introduces the physical principles underlying representative solid-state electronic devices. Through analytical models and discussion of technologically relevant materials and device structures, students will learn how fundamental materials properties determine device characteristics and performance.
Upon successful completion of the course, students should be able to analyze the origin of the electrical and electronic properties of materials, apply fundamental physical models to semiconductor systems, explain charge transport and junction behavior, and relate materials properties and electronic structure to the operating principles and performance of key devices used in modern electronics.
The course subsequently addresses semiconductor interfaces and junctions, including metal–semiconductor contacts, and introduces the physical principles underlying representative solid-state electronic devices. Through analytical models and discussion of technologically relevant materials and device structures, students will learn how fundamental materials properties determine device characteristics and performance.
Upon successful completion of the course, students should be able to analyze the origin of the electrical and electronic properties of materials, apply fundamental physical models to semiconductor systems, explain charge transport and junction behavior, and relate materials properties and electronic structure to the operating principles and performance of key devices used in modern electronics.
時間割／共通科目コード
コース名
教員
学期
時限
3773-128
GEN-CS6315L3
材料システム工学Ⅲ
TUNG CHUN CHIH
金曜2限
マイリストに追加
マイリストから削除
講義使用言語
英語
単位
2
実務経験のある教員による授業科目
NO
他学部履修
可
開講所属
工学系研究科
授業計画
1. **Crystal Structure**
Crystal lattices, unit cells, symmetry, crystallographic directions and planes, and representative semiconductor crystal structures.
2. **Diffraction and Structural Characterization**
Fundamentals of reciprocal space, Bragg diffraction, X-ray and electron diffraction, and their application to crystal structure determination.
3. **Chemical Bonding in Solids**
Ionic, covalent, metallic, and van der Waals bonding; bonding–structure relationships and their influence on materials properties.
4. **Atomic Electronic Structure and Band Formation**
Atomic orbitals, energy-level splitting in solids, formation of energy bands, density of states, and the distinction among metals, semiconductors, and insulators.
5. **Electrons and Holes in Semiconductors**
Intrinsic and extrinsic semiconductors, carrier statistics, Fermi level, doping, carrier concentration, mobility, conductivity, drift, and diffusion.
6. **Semiconductor Heterojunctions**
Band alignment, electron affinity, type-I, type-II, and type-III heterojunctions, carrier confinement, and transport across semiconductor interfaces.
7. **Metal–Semiconductor Junctions**
Schottky and Ohmic contacts, work function and electron affinity, barrier formation, band bending, interface states, and current transport mechanisms.
8. **MOS Capacitors and Semiconductor–Dielectric Interfaces**
Energy-band diagrams, accumulation, depletion, and inversion; capacitance–voltage characteristics, threshold behavior, and interface charge.
9. **Dielectric Materials for Electronic Devices**
Polarization mechanisms, dielectric constant, dielectric loss, breakdown, interface quality, high-\(k\) dielectrics, and scaling considerations.
10. **Semiconductor Device Manufacturing**
Overview of semiconductor fabrication processes, including crystal growth, thin-film deposition, oxidation, lithography, etching, doping, metallization, and device integration.
11. **Semiconductor Device Applications I**
Operating principles and applications of representative semiconductor devices, including diodes, field-effect transistors, and related electronic devices, with emphasis on the relationship between materials properties, device structure, and performance.
授業の方法
Lectures + 2 Invited guest lecturers
成績評価方法
Midterm Exams 30%
Final Exam 40%
Attendance 30%
履修上の注意
This class will provide an overview of the chemical engineering footprint in the semiconductor industry. Notably, lectures will focus on the structure-property-performance relationship from atomic engineering to system manufacturing.
